铁电存储器激光微束单粒子效应试验研究

摘要

利用脉冲激光微束单粒子效应(SEE)模拟装置,研究了铁电存储器(FRAM)工作频率对其单粒子翻转(SEU)的影响.研究结果表明,随工作频率的降低,被测器件SEU截面显著增大,且翻转是由外围电路引发的.被测芯片1→0翻转截面明显大于0→1翻转截面.对FRAM工作时序及不同芯片使能信号(CE)占空比下SEU截面的分析表明,频率降低导致的CE有效时间延长与SEU截面的增大有直接关系.本文同时开展了FRAM不同功能模块的单粒子锁定(SEL)敏感性试验,获得了相应的SEL阈值能量和饱和截面,并研究了静态和动态工作模式下由SEL引发的数据翻转情况,发现动态模式下被测器件更易受SEL影响而发生翻转.%The influence of operating frequency on single event upset (SEU) in ferro-electric random access memory (FRAM) was studied using the pulsed laser microbeam single event effect (SEE) facility.The experiment results show that the SEU cross section of FRAM increases notably with the decrease of operating frequency, and the SEU is caused by peripheral circuit.The cross section from 1 to 0 upset is larger than that from 0 to 1.The analysis of the function timing of FRAM and the SEU cross section under different duty cycles of chip enable (CE) signal indicates that the extension of CE active time due to reduced operating frequency has a direct relationship with the increase of SEU cross section.The experiment on single event latch-up (SEL) sensitivity of function block in FRAM was also studied and the SEL energy threshold and saturated SEL cross section were presented.Data upsets caused by SEL at both static and dynamic modes were discussed at the same time respectively.It's found that the test device is more susceptible to SEL-induced upsets at dynamic mode.