Epitaxially grown ferroelectric thin films for memory applications (ferroelectric random access memories)

摘要

Tetragonal Pb(Zr, Ti)O₃ films were epitaxially grown on SrRuO₃-coated SrTiO₃ substrates by metal organic chemical vapor deposition. Perfect polar-axis-oriented 50 nm thick tetragonal films were successfully grown on (100)SrRuO₃//(100)SrTiO₃ substrates. The single phase of the tetragonal symmetry region was expanded to a Zr/(Zr + Ti) ratio of around 0.6 for these films but was reduced to around 0.4 when (100)/(001)-mixture oriented 250 nm thick films were obtained. The dependence of spontaneous polarization (Ps) on the lattice parameter of c-axis to a-axis (c/a ratio) was demonstrated using perfectly polar-axis-oriented films with various Zr/(Zr + Ti) ratios. The 250 nm thick (100)/(001), (110)/(101), and (111)-oriented tetragonal films were grown on (100), (110), and (111)-oriented substrates. The domain structure was analyzed in detail, and it was found that the observed saturation polarization (P _sat) value can be explained by the Ps value and the 90° domain contribution. These data clearly demonstrate the importance of epitaxial film research for actual ferroelectric random access memories applications.View full textDownload full textKeywordsferroelectric material, ferroelectric random access memory, crystal structure, epitaxial filmRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/01411590802092206