抗辐射双极n-p-n晶体管的研究

摘要

Bipolar n-p-n transistor geometrical parameters are optimized based on the principle of minimizing the perimeter-to-area ratio （P/A）. Three types of radiation-resistant n-p-n transistors are developed and fabricated in the 20 V bipolar process. The first is emitter-base junction hardened n-p-n transistor. The second has heavily boron doped base ring. And the last uses both radiation-resistant measurements. The experimental results indicate that after irradiated by the radiation of total dose of 1 kGy, in current gain, the common n-p-n（unhardened） transistor reduces about 60%--65% , while the first two hardened n-p-n transistors increases 10%--15% ： the last hardened n-p-n transistors are 15%--20% greater than the common n-p-n transistors in current gain.%根据发射极周长与面积比（P/A）最小的原则,优化设计了双极n-p-n晶体管的尺寸参数,采用20V双极型工艺设计制造了三种抗辐射加固的n-p-n晶体管.测试表明,在总剂量为1kGy的辐照条件下,所制备的发射结加固型n-p-n晶体管和含有重掺杂基区环的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高10%—15%;而两种加固措施都有的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高15%—20%.