Radiation Hardened Bipolar High Voltage Power Transistor.

摘要

Results of an emitter comparison are given such that a decision can be made to determine if arsenic is more effective than phosphorus as an emitter dopant. Design considerations are also presented for a BV(CEO) approx. 100 V radiation hardened power transistor. Along with this is a discussion on the effects of gold on induced photocurrent,both in the lightly doped region and in the substrate. Pre-and post-irradiation electrical data are presented for representative wide and narrow base devices to show the advantages of the wide base design. (Author)