Effects of H{sub}2 Annealing and Polysilicon Emitter Structure on H{sub}(FE) of n-p-n Bipolar Junction Transistors

摘要

This paper presents the effects of H{sub}2 annealing and polysilicon emitter structures on H{sub}(FE) characteristics of n-p-n bipolar junction transistors. The increase of the number of H{sub}2 annealing steps results in the device performance (H{sub}(FE) × V{sub}A) improvement by 27.8%, due to the formation of H-Si dangling bonds, which allow the decrease of the base current. In addition, the bilayer of undoped polysilicon deposition/ion implantation and in situ doped polysilicon in the ploy emitters greatly improve the level of H{sub}(FE) reliability and 1/f noise characteristic. The experimental results of H-Si dangling bond property at the polysilicon grain boundaries and polysilicon interface with the H{sub}2 annealing steps in n-p-n bipolar junction transistor formulation will be also presented.