中带电压法分离栅控横向pnp双极晶体管辐照感生缺陷

摘要

设计并制作了一种新型双极测试结构,即在常规横向pnp双极晶体管基区表面氧化层上淀积一栅电极,通过扫描栅极所加电压,获得漏极（集电极）电流随栅极电压的变化特性,利用中带电压法分离栅控横向pnp双极晶体管在辐照过程中感生的氧化物陷阱电荷和界面陷阱电荷.本文对设计的晶体管测试结构和采用的测试方法做了具体介绍.%In this paper,we design and fabricate a new test structure of bipolar device.A gate is deposited on the oxide layer covering the base region of normal lateral pnp bipolar transistor.The characteristic of drain current（collector current） versus the gate voltage is recorded by sweeping the voltage applied to the gate,then the subthreshold-current technique is used to separate the radiation induced oxide trapped charges and interface traps in the gate controlled lateral pnp bipolar transistor during ~（60）Co-γirradiation.The test structure and the measurement of the bipolar transistor used in the experiment are introduced in detail in this paper.