Production manner and lateral PNP bipolar transistor null of insulator separable lateral bipolar

摘要

PURPOSE: To provide a lateral pnp bipolar transistor and a manufacturing method for the insulator separation-type lateral bipolar transistor, which can improve an amplification factor without reducing productive yield. ;CONSTITUTION: When a p-type deep diffusion collector layer 70 is formed at an island-shaped base region 100 with its bottom and side faces separated with an insulator, a p-type impurity, boron as an example, is diffused from the side of a trench (vertical groove) that is formed to separate the side face of the island-shaped base region 100. Then, a polysilicon region filled in the groove is formed just under a p⁺-type collector region. A p-type deep diffusion region around the trench is formed just under the p⁺-type collector region by diffusing an impurity from the trench.;COPYRIGHT: (C)1995,JPO