Formation manner of cross direction bipolar transistor and cross direction pnp transistor, bipolar transistor and cross direction pnp transistor

摘要

PURPOSE: To fabricate a bipolar transistor conformable to a method for fabricating an MOS transistor required for fabrication of a BIMOS integrated circuit. ;CONSTITUTION: A first layer 18 of second conductivity type opposite to first conductivity type is formed along the surface of a semiconductor body of first conductivity type and a first region of second conductivity type, opposite to the conductivity type of the first layer, is formed on a part of the first layer. An aperture 42 is made in a second insulation layer 40 on a part of the first region. A third conductive layer 46 is formed in the aperture and on the second insulation layer. Exposed part of the second insulation layer is removed to expose a part of the first layer. A dopant of second conductivity type is buried in the third conductive layer and the exposed part of the first layer to form a second region 58 of first conductivity type around the first region 32. When the dopant is implanted from the third conductive layer into the first region during anneal process, a third region 60 of second conductivity type is formed in the first region.;COPYRIGHT: (C)1993,JPO