The emitter of cross direction and the bipolar transistor and the production manner which possess the collector

摘要

The bipolar transistor includes, the substrate which consists of the semi-conducting material high mobility formation inside (1) and the substrate (2) and the donor formation which it adjoins to high mobility formation (3). The emitter terminal (4) the emitter contact with respect to donor formation forms (5), the collector terminal (6) forms the collector contact (7) with respect to donor formation. The based terminal (8) the connect conductively is done in high mobility formation. The particular transistor is production possible with the HEMT technology or BiFET technology of GaAs.