SOI (Silican On Insulator) by Plastic lateral transistor (Lateral Bipolar Transistor) formed on a substrate

摘要

The transistor formed in an Si layer on an insulating substrate comprises: a base region of first type formed in the Si layer emitter region of second type formed in the Si layer and sharing a junction with the base; a collector region of second type formed in the Si layer on the opposite side of the base and sharing a junction with the base; and a base electrode of first type material being insulated from the emitter and collector. The base, emitter and collector are in surface-to-surface contact with the underlying insulator of the substrate. The base region pref. has a concave vertical doping profile with a min. value at a portion between the base electrode and the insulator.