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Electronic and Optoelectronic Devices Based on Quasi-Metallic Carbon Nanotubes.

机译:基于准金属碳纳米管的电子和光电设备。

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摘要

Electronic devices have become the backbone of our daily life usage. In recent years, new types of electronics have emerged such as wearable electronics, flexible electronics, and optoelectronics. In particular, the idea of converting light into electricity with high efficiency, by carefully engineering the device structure, has become an active area of research. In this thesis, carbon nanotube electronic and optoelectronic devices are investigated which are based on suspended quasi-metallic carbon nanotubes. These quasi-metallic nanotube electronics exhibit semi-ballistic electron transport at room temperature, which gives them high sensitivity to gaseous environment. Once the nanotube is in contact with a substrate, the mini-gap in their energy band structure diminishes due to fixed charges in the oxide. Moreover, quasi-metallic carbon nanotube tunnel field-effect-transistors (TFETs) using an electrostatically tunable pn junction are engineered and studied. Although these devices do not show any diode behavior at room temperature, they show a finite photocurrent due to the existence of a space charge region. At cryogenic temperatures, these transistors show a tunable band-to-band (zener) tunneling with sub-threshold swing ~1mV/decade. At room temperature, these devices can produce photocurrent upon light exposure. The mechanism underlying the generated photocurrent in these devices reveals two different mechanisms. Devices with small band gaps (Egap < 75meV) exhibit photothermoelectric effect, while devices with larger band gaps, photo-induced electron hole separation by a built-in electric field (photovoltaic effect) dominates the photocurrent transport. Upon photothermal heating of these devices at cryogenic temperatures, an oscillatory behavior occurs in the current-voltage characteristics with a very low frequency of oscillation. This oscillatory behavior is found to be caused by opto-mechanical action where the nanotube is thermally coupled to an optical cavity.
机译:电子设备已成为我们日常生活使用的骨干。近年来,出现了新型的电子设备,例如可穿戴电子设备,柔性电子设备和光电子设备。特别地,通过精心设计设备结构来将光高效转换为电能的想法已成为研究的活跃领域。本文研究了基于悬浮的准金属碳纳米管的碳纳米管电子和光电器件。这些准金属纳米管电子器件在室温下表现出半弹道电子传输,这使其对气态环境具有高度敏感性。一旦纳米管与衬底接触,由于氧化物中的固定电荷,其能带结构中的微间隙减小。此外,还设计并研究了使用静电可调pn结的准金属碳纳米管隧道场效应晶体管(TFET)。尽管这些器件在室温下未显示任何二极管行为,但由于存在空间电荷区,因此它们显示出有限的光电流。在低温下,这些晶体管显示出可调谐的带间(隧穿)隧穿,亚阈值摆幅约为1mV /十倍。在室温下,这些设备在曝光后会产生光电流。这些设备中产生的光电流所基于的机理揭示了两种不同的机理。带隙小的器件(Egap <75meV)显示出光热电效应,而带隙较大的器件通过内置电场(光电效应)进行光致电子空穴分离(光电效应)占主导地位。在低温下对这些设备进行光热加热时,电流-电压特性会发生振荡,振荡频率非常低。发现这种振荡行为是由光机械作用引起的,其中纳米管被热耦合到光学腔。

著录项

  • 作者

    Amer, Mohammed Moh.;

  • 作者单位

    University of Southern California.;

  • 授予单位 University of Southern California.;
  • 学科 Engineering Electronics and Electrical.;Energy.
  • 学位 Ph.D.
  • 年度 2014
  • 页码 132 p.
  • 总页数 132
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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