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Atomic Layer Deposition Enabled Synthesis of Multiferroic Nanostructures.

机译:原子层沉积能够合成多铁性纳米结构。

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摘要

Complex metal oxides exhibit remarkable tunability in their ferromagnetic, ferroelectric, and multiferroic properties that enable future applications such as non-volatile memory, miniaturized antenna, sensors and actuators. Motivated by the promise of high magnetoelectric coupling from nanostructured multiferroics, atomic layer deposition (ALD) processes were developed to synthesize single-phase ferroics that would be further integrated to form composite multiferroics. The highly conformal ALD coatings promised intimate interfaces of the various ferroic phases to realize tunable magnetoelectric coupling.;In this work, a radical enhanced ALD process was used to synthesize the complex oxide nanostructures, using metalorganic precursors Y(tmhd)3 (tmhd = 2,2,6,6-tetramethylheptane-3,5 dione), Mn(tmhd)3, Bi(tmhd)3, Co(tmhd)2, and Fe(tmhd)3 as well as oxygen atoms produced from a microwave powered atomic beam source. The processing-structure-property relations were systematically studied for three material systems: YMnO3 (YMO), BiFeO3 (BFO), and CoFe 2O4 (CFO). For YMO, it was found that the crystal structure forming between orthorhombic or hexagonal configurations was due to the substrate and that Si(111) and Y:ZrO2 (111) substrates preferentially formed the orthorhombic and hexagonal phases respectively. The magnetic susceptibility versus temperature of YMO was characterized and it was determined that the magnetic anomalies at ~48 K and ~80 K corresponded to orthorhombic and hexagonal phases respectively which matched the reports given from literature. The ALD BFO films were grown on SrTiO3 (STO) (001) substrates and were found to crystallize epitaxially in the (001) pseudocubic orientation when annealed at 650 °C. The ferroelectric properties were confirmed via PFM while the weak ferromagnetic coupling showed a magnetic saturation ( Ms) of approximately 27 emu/cm3. The ALD CFO films were grown on STO (001) substrates and were mostly polycrystalline with a textured (001) orientation. The magnetic properties were studied and the Ms ranged from 260 to 550 emu/cm3 and the magnetic coercivity (Hc) ranged from 200 to 2180 Oe depending on the direction of the magnetic field, annealing condition, and thickness which matched values of those found in bulk and other thin film studies.;Synthesis of multiferroic composites with nanostructure was enabled by ALD. 2-2 multiferroic composite configurations using BiFeO3 and CoFe2O4 were synthesized by ALD and it was determined that for 40 nm thick films, a change in the easy axis of magnetization could be controlled by changing the size and number of repeating BFO/CFO bilayers. 0--3 multiferroic composite configurations using both BFO/CFO and CFO/PZT were synthesized by a hybrid approach first using evaporation induced self-assembly to deposit a porous metal oxide thin film followed by the ALD film. It was confirmed by SEM that the ALD coating was conformal and the magnetic properties were studied. The CFO template film with ALD BFO was found to have an Ms of 151.1 emu/cm3 out-of-plane and 89.4 emu/cm3 in-plane while Hc was about 2.0 kOe for both orientations. For the PZT template film with CFO overlayer, it was found that the Ms began to saturate at about 40--45 emu/cm3 once the CFO thickness exceeded 4 nm due to the restricted pore necks. These volumetric values exceeded thin films found in literature with 0--3 configurations that were synthesized using wet techniques.
机译:复杂的金属氧化物在其铁磁,铁电和多铁性方面表现出显着的可调谐性,可实现诸如非易失性存储器,小型化天线,传感器和执行器等未来应用。受到来自纳米结构多铁磁的高磁电耦合的希望的推动,原子层沉积(ALD)工艺被开发来合成单相铁磁,该单相铁磁将被进一步集成以形成复合多铁磁。高度保形的ALD涂层保证了各个铁相的紧密界面,以实现可调节的磁电耦合。;在这项工作中,使用金属有机前体Y(tmhd)3(tmhd = 2 ,2,6,6-四甲基庚烷-3,5二酮),Mn(tmhd)3,Bi(tmhd)3,Co(tmhd)2和Fe(tmhd)3以及由微波供电的原子产生的氧原子光束源。系统研究了三种材料系统的加工结构属性关系:YMnO3(YMO),BiFeO3(BFO)和CoFe 2O4(CFO)。对于YMO,发现在正交晶或六边形构型之间形成的晶体结构是由于衬底引起的,并且Si(111)和Y:ZrO2(111)衬底分别优先形成了正交晶相和六边形相。表征了YMO的磁化率与温度的关系,并确定〜48 K和〜80 K处的磁异常分别对应于正交相和六方相,与文献报道相符。 ALD BFO薄膜在SrTiO3(STO)(001)衬底上生长,并在650°C退火时发现以(001)伪立方取向外延结晶。通过PFM证实了铁电性能,而弱铁磁耦合显示出大约27 emu / cm3的磁饱和(Ms)。 ALD CFO薄膜在STO(001)衬底上生长,并且大多是具有纹理(001)取向的多晶。根据磁场方向,退火条件和厚度,对磁性进行了研究,其Ms为260至550 emu / cm3,磁矫顽力(Hc)为200至2180 Oe。大量研究和其他薄膜研究。ALD实现了具有纳米结构的多铁性复合材料的合成。通过ALD合成了使用BiFeO3和CoFe2O4的2-2多铁复合结构,并确定对于40 nm厚的薄膜,易磁化轴的变化可以通过改变重复的BFO / CFO双层的大小和数量来控制。通过混合方法首先使用蒸发诱导自组装法沉积多孔金属氧化物薄膜,然后沉积ALD膜,使用混合方法合成了同时使用BFO / CFO和CFO / PZT的0--3多铁性复合材料构型。通过SEM确认了ALD涂层是保形的并且研究了磁性。发现具有ALD BFO的CFO模板膜的面外Ms为151.1emu / cm3,面内Ms为89.4emu / cm3,而两个方向的Hc均为约2.0kOe。对于具有CFO覆盖层的PZT模板膜,发现由于受限制的孔颈,一旦CFO厚度超过4 nm,则Ms开始以约40--45 emu / cm3的速度饱和。这些体积值超过了文献中使用湿法技术合成的具有0--3构型的薄膜。

著录项

  • 作者

    Pham, Calvin Dinh-Tu.;

  • 作者单位

    University of California, Los Angeles.;

  • 授予单位 University of California, Los Angeles.;
  • 学科 Chemical engineering.
  • 学位 Ph.D.
  • 年度 2015
  • 页码 237 p.
  • 总页数 237
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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