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Fundamental studies of chemical mechanical planarization (CMP) processes of tungsten and copper.

机译:钨和铜的化学机械平面化(CMP)工艺的基础研究。

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Atomic force microscopy (AFM) has been used to study the interfacial frictional properties of tungsten and copper surfaces in a variety of aqueous solutions. Bare or alumina (Al2O3) coated Si3N 4 tips have been used to emulate the microasperity contact with the tungsten or copper surfaces. This experimental approach has proven to be versatile in providing atomic level insight into the chemical mechanical planarization (CMP) of tungsten and copper.; It has been demonstrated through the course of this dissertation that the interfacial friction and adhesion of tungsten surface is influenced substantially by the solution + composition of the AFM tip (Si3N4 or Al2O3), and the concentration and composition of an oxidizing agent. The interfacial friction of tungsten was observed to reach a maximum value at a pH located between the isoelectric points (IEP's) of the tip and tungsten. Friction is influenced in this way due to the variation in the magnitude and sign of surface charges, which depend on the solution pH.; The extent of surface oxidation has been correlated with the interfacial friction of tungsten surfaces and material removal rates by systematically varying the concentration and composition of the oxidizing agents (KNO 3, KClO3, and KIO3) in the solution. It has been proposed that the material removal primarily occurs through a tip-mediated dissolution process of WO3 on the surface. It has been proposed that the dissolution process provides a pathway of energy dissipation and increases the interfacial friction of the tungsten surface composed of this oxide.; Finally, this microscopic approach has been used to investigate copper surfaces under CMP conditions. In this investigation, the formation of a thicker reaction overlayer, the presence of higher interfacial friction, and the tip-mediated/localized dissolution of copper interfaces were observed in acidified solutions of BTA, while little change in the interfacial properties of the copper film was observed in neutral solutions of BTA. It has been proposed that energy dissipation through the dissolution process of BTA-Cu overlayer enhances the interfacial friction.
机译:原子力显微镜(AFM)已用于研究各种水溶液中钨和铜表面的界面摩擦特性。裸露或氧化铝(Al 2 O 3 )涂覆的Si 3 N 4 尖端已被用来模拟微细度与钨或铜表面接触。这种实验方法已被证明在提供原子级的钨和铜化学机械平面化(CMP)方面是通用的。通过本文的研究表明,钨表面的界面摩擦和附着力基本上受AFM尖端(Si 3 N 4 或Al 2 O 3 )以及氧化剂的浓度和组成。观察到钨的界面摩擦在尖端和钨的等电点(IEP's)之间的pH值达到最大值。由于表面电荷的大小和符号的变化(取决于溶液的pH值),以这种方式影响摩擦。通过系统地改变氧化剂(KNO 3 ,KClO 3 )的浓度和组成,使表面氧化程度与钨表面的界面摩擦和材料去除率相关。 ,以及解决方案中的KIO 3 )。已经提出,材料的去除主要是通过尖端介导的WO 3 在表面上的溶解过程发生的。已经提出,溶解过程提供了能量耗散的途径并增加了由该氧化物组成的钨表面的界面摩擦。最后,这种微观方法已用于研究CMP条件下的铜表面。在这项研究中,在BTA的酸化溶液中观察到了较厚的反应层的形成,较高的界面摩擦的存在以及尖端介导的/局部的铜界面溶解,而铜膜的界面性质几乎没有变化。在BTA的中性溶液中观察到。已经提出,通过BTA-Cu覆盖层的溶解过程的能量消散增强了界面摩擦。

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