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Direct Measurement Of Planarization Length For Copper Chemical Mechanical Planarization Polishing (cmp) Processes Using A Large Pattern Test Mask

机译：使用大型图案测试掩模直接测量铜化学机械平面抛光（cmp）工艺的平面长度

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Paul Lefevre Albert; Albert Gonzales; Tom Brown; Gerald Martin; International Sematech; Ma Michael Gostein; Philips Analytical; Ma John Nguyen;
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年度 2007
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1. Effect on Two-Step Polishing Process of Electrochemical Mechanical Planarization and Chemical-Mechanical Planarization on Planarization [J] . Sukhoon Jeong, Sukbae Joo, Hyoungjae Kim, Japanese journal of applied physics . 2009,第6issue1期

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2. Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurries. Part II: Effects of sorbate on chemical mechanical planarization performance [J] . Magi Nagar, Jan Vaes, Yair Ein-Eli Electrochimica Acta . 2010,第8期

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3. A Combined Gas Cluster Ion Beam (GCIB) and Chemical-Mechanical Polish (CMP) Planarization Scheme for Tungsten Replacement Metal Gate (W-RMG) [J] . Tseng Wei-Tsu, Long Justin, Mohan Kaushik, ECS Journal of Solid State Science and Technology . 2016,第7期

机译：钨置换金属门（W-RMG）的组合气团离子束（GCIB）和化学机械抛光（CMP）平面化方案
4. DIRECT MEASUREMENT OF PLANARIZATION LENGTH FOR COPPER CHEMICAL MECHANICAL PLANARIZATION POLISHING (CMP) PROCESSES USING A LARGE PATTERN TEST MASK [C] . Paul Lefevre, Albert Gonzales, Tom Brown, Symposium on Chemical-Mechanical Polishing 2001-Advances and Future Challenges, Apr 18-20, 2001, San Francisco, California . 2001

机译：使用大型图案测试面罩直接测量铜化学机械平面抛光（CMP）过程的平面化长度
5. Fundamental studies of chemical mechanical planarization (CMP) processes of tungsten and copper. [D] . Lim, Min Soo. 2002

机译：钨和铜的化学机械平面化（CMP）工艺的基础研究。
6. Effect of Conditioner Type and Downforce and Pad Surface Micro-Texture on SiO2 Chemical Mechanical Planarization Performance [O] . Jeffrey McAllister, Calliandra Stuffle, Yasa Sampurno, 2019

机译：调节剂类型和下压力以及垫表面的微观结构对SiO2化学机械平面化性能的影响
7. Direct Measurement of Planarization Length for Copper Chemical Mechanical Planarization Polishing (CMP) Processes Using a Large Pattern Test Mask [O] . Paul Lefevre, Albert Gonzales, Tom Brown, 2001

机译：使用大型图案测试掩模直接测量铜化学机械平面抛光（CMP）工艺的平面长度

Direct Measurement Of Planarization Length For Copper Chemical Mechanical Planarization Polishing (cmp) Processes Using A Large Pattern Test Mask

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