COMBINATION FOR CHEMICAL AND MECHANICAL PLANARIZATION OF A SUBSTRATE CONTAINING TUNGSTEN, CAPABLE OF BEING USED IN TUNGSTEN CMP REQUIRING LOW DISHING/PLUG RECESS, AND A METHOD FOR MANUFACTURING THE SAME, AND A COMPOSITION THEREOF

摘要

PURPOSE: A combination for a substrate containing tungsten is provided to be effectively used in tungsten CMP(chemical-mechanical planarization), to have low tungsten/derivative selectivity for adjustable tungsten CMP, and to obtain high removal ratio of the tungsten and dielectric materials during the CMP process.;CONSTITUTION: The combination for a substrate containing tungsten is the combination of chemical and mechanical polishing composition. The combination includes a substrate having a sub-micron integrated circuit and a surface with one or more features on the surface containing the tungsten. The substrate contacts with the chemical and mechanical polishing composition including periodic acid and an abrasive.;COPYRIGHT KIPO 2010