CHEMICAL MECHANICAL PLANARIZATION METHOD OF A TUNGSTEN-CONTAINING SUBSTRATE CAPABLE OF MINIMIZING AND PREVENTING PLUG RECESS AND THE DISHING/EROSION OF A FEATURE ON A SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A chemical mechanical planarization method of a tungsten-containing substrate is provided to obtain low dishing level in a polished substrate while ensuring high metal removal rate.;CONSTITUTION: A chemical mechanical planarization method of a tungsten-containing substrate comprises a step of contacting the surface of a substrate with abrasives and liquid components. The liquid component does not contain carboxylic acids. The liquid component includes water, acid enough to provide pH 2-5, peroxide-type oxidants, iron compounds inducing the formation of free radicals from the peroxide-type oxidants in order to enhance a 1-100 ppm tungsten removal ratio, and 0.1-10 ppm poly(alkyleneimine).;COPYRIGHT KIPO 2011