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CMPTUNGSTEN CHEMICAL MECHANICAL PLANARIZATION CMP WITH LOW DISHING AND LOW EROSION TOPOGRAPHY
CMPTUNGSTEN CHEMICAL MECHANICAL PLANARIZATION CMP WITH LOW DISHING AND LOW EROSION TOPOGRAPHY
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机译:CMPTUNGSTEN化学机械平坦化CMP,低凹陷和低侵蚀地形
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摘要
The present invention relates to compositions, methods and systems that can be used for chemical mechanical planarization (CMP) of tungsten containing semiconductor devices. CMP slurries comprising a bicyclic amidine additive provide low dishing and low corrosion topography.
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