声明
Chapter 1 Introduction
1.1 2D flatland: graphene, its unique structure and properties
1.2 Wondering on the land of its abundant applications
1.2.1 Electronic devices
1.2.2 Graphene composites
1.2.3 Energy storage
1.2.4 Optical applications
1.3 Main preparation methods
1.3.1 Mechanical exfoliation
1.3.2 Epitaxial graphene on SiC
1.3.3 Oxidation-reduction method
1.3.4 Chemical vapor deposition
1.4 The significances and contents of the thesis
1.4.1 The significances of the thesis
1.4.2 The contents of the thesis
Chapter 2 Experimental reagents, materials, and main characterization methods for graphene
2.1 Experimental reagents and materials
2.2 Experimental instruments
2.3 Characterization methods for graphene
2.3.1 Optical microscopy
2.3.2 Scanning electron microscopy
2.3.3 Atomic force microscopy
2.3.4 Raman spectrometry
2.4 Fabrication and measurement for Hall bar device
2.4.1 Fabrication equipment
2.4.2 Fabrication process
2.4.3 Measurement equipment and conditions
Chapter 3 Direct growth of graphene on SiO2 and SiC
3.1 Introduction
3.2 Experimental process
3.3 Result and discussion
3.3.1 The effect of growth temperature
3.3.2 The effect of CH4 flow rate
3.3.3 The effect of H2 flow rate
3.3.4 The effect of growth time
3.3.5 Measurement of electrical properties
3.4 The mechanism of direct growth of graphene on insulating substrate
3.5 Summary
Chapter 4 Direct growth of graphene on SiO2 using photoresist
4.1 Introduction
4.2 Experimental process
4.3 Result and discussion
4.3.1 The effect of Cu capping layer
4.3.2 The effect of Cu/Ni capping layer
4.4 The mechanism of direct growth of graphene on SiO2 using photoresist
4.5 Summary
Chapter 5 Summary and outlook
5.1 Work summary
5.2 The main innovations in the thesis
5.3 Outlook
参考文献
Published papers and scientific research participation
致谢
天津大学;
