首页> 外国专利> GRAPHENE SUBSTRATE AND A METHOD OF FABRICATING THEREOF CAPABLE OF DIRECTLY GROW THE GRAPHENE ON AN INSULATION LAYER WITHOUT TRANSCRIPTION

GRAPHENE SUBSTRATE AND A METHOD OF FABRICATING THEREOF CAPABLE OF DIRECTLY GROW THE GRAPHENE ON AN INSULATION LAYER WITHOUT TRANSCRIPTION

机译:石墨烯基质及其制造方法在不进行转录的情况下在绝缘层上直接生长石墨烯的方法

摘要

PURPOSE: A graphene substrate and a method of fabricating thereof are provided to prevent damages of the grapheme by manufacturing grapheme electric component without a transcription process.;CONSTITUTION: A graphene substrate comprises a substrate, a metal oxide layer(130), and a graphene layer(140,) and a buffer layer(120). The substrate is a conductive board. The metal oxide layer has oxygen content which gradually diminishes as move to the graphene layer. The metal oxide layer is one selected from nickel oxide, copper oxide, and platinum oxide. The metal oxide layer has a thickness of 100- 300 nano meters. The graphene layer a single layer or double layer. The buffer layer is arranged between the substrate and the metal oxide layer.;COPYRIGHT KIPO 2012
机译:用途:提供一种石墨烯基板及其制造方法,以通过不经过转录工艺即可制造石墨烯电气组件来防止石墨烯受损;组成:石墨烯基板包括基板,金属氧化物层(130)和石墨烯层(140)和缓冲层(120)。基板是导电板。金属氧化物层具有的氧含量随着向石墨烯层的移动而逐渐减少。金属氧化物层是选自氧化镍,氧化铜和氧化铂中的一种。金属氧化物层的厚度为100-300纳米。石墨烯层为单层或双层。缓冲层设置在基板和金属氧化物层之间。COPYRIGHTKIPO 2012

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