Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi,Maryland 20783, USA;
College of Nanoscale Science and Technology, SUNY Polytechnic Institute, Albany,New York 12203, USA;
College of Nanoscale Science and Technology, SUNY Polytechnic Institute, Albany,New York 12203, USA;
Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi,Maryland 20783, USA;
机译:GaN / AlGaN / GaN高电子迁移率晶体管的GaN覆盖层厚度的性能分析
机译:AlGaN / GaN高电子迁移率晶体管在独立式GaN基板上的背阻击效应分析
机译:Algan / Aln / GaN和Inaln / Aln / GaN高电子迁移率晶体管的陷阱状态分析
机译:拉伸AlGaN / GaN高电子迁移晶体管的力学分析
机译:AlGaN(氮化镓铝)/ GaN(氮化镓)高电子迁移率晶体管的热压电机械仿真。
机译:具有再生欧姆接触的半绝缘Ammono-GaN衬底上的AlGaN / GaN高电子迁移率晶体管
机译:用铜填充结构的AlGaN / GaN高电子迁移率晶体管的热分析和操作特性:模拟研究