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OPTIMIZING TUNGSTEN CMP IN THE AGE OF COPPER

机译:在铜时代优化钨CMP

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摘要

In a tungsten (W) plug/copper (Cu) damascene interconnect scheme, the requirements for dishing and erosion at the W plug CMP process can be significantly more stringent than for a similar aluminum scheme. Data will be presented that compares the physical measurements for dishing and erosion as a function of feature size. This will be shown on both flexible and solid platen, and for different process conditions including down force, carrier speed, slurry flow and time. It will be shown that the dishing and erosion is larger for the flexible platen and a higher down force process. Electrical data and inspection results will also be presented showing the impact of the erosion on subsequent metal resistance and bridging.
机译:在钨(W)插头/铜(Cu)镶嵌互连方案中,与类似的铝方案相比,W插头CMP工艺对凹陷和腐蚀的要求可能要严格得多。将提供数据,这些数据将对凹陷和腐蚀的物理测量值与特征尺寸的函数进行比较。这将在挠性和实心压板上显示,并且适用于不同的工艺条件,包括下压力,载体速度,浆料流量和时间。结果表明,挠性压板的凹陷和腐蚀较大,而下压力较大。还将提供电气数据和检查结果,显示腐蚀对后续金属电阻和桥接的影响。

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