Institute of Technical Physics, University of Kassel Heinrich Plett Strasse 40, D-34109 Kassel, Germany;
Institute of Technical Physics, University of Kassel Heinrich Plett Strasse 40, D-34109 Kassel, Germany;
Institute of Technical Physics, University of Kassel Heinrich Plett Strasse 40, D-34109 Kassel, Germany;
NWF2-Physik, University of Regensburg, Universitaetsstrasse 31, D-93040 Regensburg, Germany;
NWF2-Physik, University of Regensburg, Universitaetsstrasse 31, D-93040 Regensburg, Germany;
Physics Department E 12, Technical University Munich, D-85747 Garching, Germany;
Physics Department E 12, Technical University Munich, D-85747 Garching, Germany;
thin film adhesion; interface layers; c-BN films;
机译:BN缓冲层中无序共价键对改善c-BN膜附着力的影响
机译:偏斜的h-BN中间层改善c-BN膜的附着力
机译:基于氮等离子体的离子注入技术改性的Si(100)上c-BN膜的界面和粘附性的研究
机译:梯度接口层改善C-BN薄膜粘附
机译:用于主动控制电化学反应的动态面内电势梯度:第一部分。金薄膜上1和2组分烷硫醇单层梯度的表征。第二部分平面内电势梯度的应用。
机译:反应层与层悬浮薄膜并在接口创建水和有机相之间的半透膜大会
机译:薄膜:与外延LIMN2 O4薄膜界面相邻的结构变形和组成梯度(ADV。母体。接口8/2014)