Thin film e.g. gallium nitride thin film, transferring method for e.g. microwave field, involves forming adhesion layer on substrate, and thinning substrate by breaking at fragile area created by fragilization of substrate to form thin film

摘要

The method involves forming an adhesion layer made of nitride on a surface (40) of a substrate (30) made of III-V type material. A bonding layer made of oxide is formed on the adhesion layer. The substrate, adhesion layer and bonding layer are assembled on another substrate. The substrate (30) is thinned by breaking at the level of buried fragile area created by a fragilization of the substrate (30) to form a thin film. An independent claim is also included for a material structure comprising a substrate.