Method for manufacturing semiconductor component e.g. thin film transistor, involves forming semiconductor layer on intermediate layers arranged on support substrate, and removing portion of substrate to access semiconductor layer

摘要

The method involves providing a support substrate (1) and forming intermediate layers (2a,2b) on the support substrate. A semiconductor layer (3) comprising silicon-based dielectric and silicon nano-crystals, is formed on the intermediate layers arranged on the substrate. The semiconductor layer is annealed at a temperature of 700[deg] C for preset time duration. A portion of support substrate is removed to access the semiconductor layer. An independent claim is included for a semiconductor component.