Display Lab., Samsung Electronics CO. LTD, San 14-1, Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, 446-712, Korea;
Display Lab., Samsung Electronics CO. LTD, San 14-1, Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, 446-712, Korea;
Display Lab., Samsung Electronics CO. LTD, San 14-1, Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, 446-712, Korea;
Display Lab., Samsung Electronics CO. LTD, San 14-1, Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, 446-712, Korea;
Department of Electronic Engineering, Konkuk University, Hwayang-dong, Seoul, 143- 701, Korea;
Display Lab., Samsung Electronics CO. LTD, San 14-1, Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, 446-712, Korea;
Display Lab., Samsung Electronics CO. LTD, San 14-1, Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, 446-712, Kore;
机译:锌 - 氧化锡喷涂氧化锌氧化锌氧化锌薄膜晶体管稳定性和性能的提高
机译:通过热退火改善等离子体处理铟镓氧化锌薄膜晶体管的装置特性
机译:利用非晶氧化物多层源/漏电极改善非晶铟镓锌氧化物薄膜晶体管的稳定性
机译:热退火后镓铟锌氧化物薄膜晶体管的稳定性改进
机译:氧化锌发光二极管,氧化铟锌薄膜晶体管和氮化铝镓/氮化镓高电子迁移率晶体管基生物传感器的制造与表征。
机译:CF4等离子体处理HfO2栅电介质的非晶铟镓锌氧化物薄膜晶体管的电性能和可靠性提高
机译:用于溶液加工的非晶铟 - 镓 - 氧化锌薄膜晶体管的短时间氦退火