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首页> 外文会议>Thin film transistors 10(TFT 10) >The Effect of Illumination on the Negative Bias Temperature Instability in Zinc Tin Oxide Thin Film Transistors
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The Effect of Illumination on the Negative Bias Temperature Instability in Zinc Tin Oxide Thin Film Transistors

机译：照明对氧化锌锡薄膜晶体管负偏压温度不稳定性的影响

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摘要

Oxide thin film transistors (TFTs) have attracted much attention for next generation TFT applications such as flexible or transparent displays because they can be fabricated at low temperatures and have a wide bandgap (1-3). In addition, oxide TFTs are suitable for extreme large display panel due to their relatively easy fabrication process and good uniformity. Oxide TFTs exhibit a high carrier mobility (>~10cm~2/Vs) compared to hydrogenated amorphous silicon (
机译：氧化物薄膜晶体管（TFT）已在下一代TFT应用（如柔性或透明显示器）中引起了广泛关注，因为它们可以在低温下制造且具有较宽的带隙（1-3）。另外，氧化物TFT由于其相对容易的制造过程和良好的均匀性而适合于超大型显示面板。与作为目前显示技术中使用的常规材料的氢化非晶硅（<1cm〜2 / Vs）相比，氧化物TFT表现出高的载流子迁移率（>〜10cm〜2 / Vs）。

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  • 来源
    《Thin film transistors 10(TFT 10)》|2010年|p.325-330|共6页
  • 会议地点 Las Vegas NV(US);Las Vegas NV(US)
  • 作者

    U. K. Kim; J. H. Kim; H. C. Oh; Y. J. Chung; C. S. Hwang;

  • 作者单位

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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