机译:负偏压照明应力引起的非晶铟锡锌氧化物薄膜晶体管不稳定性的研究
School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea;
School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea;
School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea;
School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do 446-711, South Korea;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do 446-711, South Korea;
Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340, South Korea;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do 446-711, South Korea;
School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea;
机译:非晶InGaZnO薄膜晶体管-第二部分:负偏置照明应力引起的不稳定性的建模和仿真
机译:顶栅偏压对双栅非晶铟镓锌氧化物薄膜晶体管光电流和负偏压照明应力不稳定性的影响
机译:高压氧退火对InGaZnO薄膜晶体管的负偏压照明应力诱导的不稳定性的影响
机译:负偏压和照明应力下漏极偏压对非晶InGaZnO薄膜晶体管不稳定性的影响
机译:铟镓锌氧化物和锌锡氧化物薄膜晶体管的制造工艺评估和负偏压照明应力研究。
机译:A-Ingazno薄膜晶体管中光漏电流和负偏压照明应力的退火诱导稳定性的定量分析
机译:O-空位作为负偏差照明应力不稳定的起源 在非晶In-Ga-Zn-O薄膜晶体管中