首页> 外文会议>Tenth International Symposium on Silicon-on-Insulator Technology and Devices Ⅹ, 10th, Mar 25-29, 2001, Washington DC >ELECTRICAL CHARACTERIZATION of BONDED SOI LAYERS with Hg-CONTACT 'HORSESHOE' PROBES and InGa-CONTACT 'H-FET' STRUCTURES
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ELECTRICAL CHARACTERIZATION of BONDED SOI LAYERS with Hg-CONTACT 'HORSESHOE' PROBES and InGa-CONTACT 'H-FET' STRUCTURES

机译:具有汞接触“马蹄”探针和InGa接触“ H-FET”结构的键合SOI层的电特性

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摘要

Large-area pseudo-MOSFET characteristics of a commercial Hg-probe and a large-area rectangular "H-FET" using InGa cold contacts are studied. Relative mobility values are used to determine the shape factor for the "horseshoe ring-dot" Hg probe and compared to results for a complete ring-dot probe. Differences between Hg-probe FETs and InGa H-FETs are discussed in terms of the cold contacts formed to the SOI films by the two metals.
机译:研究了商用汞探针的大面积伪MOSFET特性和使用InGa冷触点的大面积矩形“ H-FET”。相对迁移率值用于确定“马蹄形环点” Hg探针的形状因子,并将其与完整环点探针的结果进行比较。讨论了汞探针FET和InGa H-FET之间的区别,即两种金属与SOI膜形成的冷接触。

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