The author employs the bonding technology to conduct experiments on the anodic bonding of SOI/glass. It is found that the bonding can not be successfully accomplished when the thickness of buried oxide layer (BOX) surpasses 500 nm. The paper analyzes the impact of the thickness of BOX on the voltage drop of depletion layer and the electrostatic pressure between SOI and glass. The failure of bonding is caused by the Voltage dividing effect of BOX which lead to a decrease of the voltage drop of depletion layer and weakening of the electrostatic pressure between SOI and glass. A power-supply system which has two output modes, high-voltage direct current power and high-voltage pulse power, is designed to improve the migration rate of oxygen anions,thus increasing the bonding speed. Further more,it is discovered that a probe electrode connecting the anode and the device layer of SOI could avoid the impact of the thickness of BOX on bonding,improve the voltage between depletion layer and device layer and increase bonding electrostatic pressure. The experiments show that the improved bonding equipment can realize the bonding between glass and SOI of varying BOX thickness. It can also be applied to the bonding between other heterogeneous materials.%运用阳极键合技术,对绝缘体上硅(SOI)/玻璃进行阳极键合实验,发现当埋氧层厚度超过500 nm时,键合很难成功.分析了SOI埋氧层厚度对耗尽层电压降及键合静电力的影响,得出由于埋氧层的分压作用,耗尽层的压降减小,键合静电力减弱,导致键合失败.通过设计高压直流和高压脉冲两种输出方式的电源系统,提高氧负离子的迁移速率从而提高键合速度.从平板式阳极引一根探针电极到SOI器件层表面,使键合电压直接加在耗尽层上,避免埋氧层厚度对键合的影响,提高键合静电力.实验表明,通过改进的键合设备能实现不同氧化层厚度的SOI片与玻璃间的键合,该设备还适用于其他异质材料间的阳极键合.
展开▼
