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ELECTRICAL CHARACTERIZATION of BONDED SOI LAYERS with Hg-CONTACT 'HORSESHOE' PROBES and InGa-CONTACT 'H-FET' STRUCTURES

机译:用HG接触“马蹄形”探头和Inga接触“H-FET”结构的粘合SOI层的电气表征

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摘要

Large-area pseudo-MOSFET characteristics of a commercial Hg-probe and a large-area rectangular "H-FET" using InGa cold contacts are studied. Relative mobility values are used to determine the shape factor for the "horseshoe ring-dot" Hg probe and compared to results for a complete ring-dot probe. Differences between Hg-probe FETs and InGa H-FETs are discussed in terms of the cold contacts formed to the SOI films by the two metals.
机译:研究了商业HG-探头的大面积伪MOSFET特性,使用INGA冷触点进行了大面积的矩形“H-FET”。相对移动性值用于确定“马蹄环点”HG探针的形状因子,并与完整的环形探针的结果进行比较。 HG-探针FET和INGA H-FET之间的差异在由两个金属形成到SOI膜的冷触点方面讨论。

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