Formation of Si-on-insulator structure by lateral solid phase epitaxial growth with local P-doping

摘要

A low temperature process for silicon-on-insulator (SOI) formation is essential to realize future 3-dimonsional large scale Integrated circuit (LSI). For this purpose, lateral solid phase epitaxial growth (L-SPE) in deposited amorphous Si (a-Si) films on SiO2 has been studied recently. However, the L-SPE growth Is limited to a few ¿¿m from the seeding-area. Doping of a-Si with P atoms increased the L-SPE length to a maximum of 40 ¿¿m1). However. SOI with a high P uoncentration is not suitable to be used as a substrate for active device fabrication.