An atomic-scale derived continuous approach for the anisotropic etching

摘要

Starting from the Ising model for the bond-breaking algorithm associated to the problem of anisotropic etching of crystals, a method is used to write the discrete master equation for etching normally to indefinite large planes. This equation links the values of the absence probabilities for bonds placed in neighbouring lattice planes and can be transformed to describe a continuous spatial field of probabilities. The method allows the calculation of the etching rate angular diagrams. Examples are shown for several orientations and sets of parameters governing the bond-breaking scheme at atomic level. Comparisons with experimental results are provided.