Quenching effects in scanning tunneling microscopy studies of epitaxial growth

机译：外延生长的扫描隧道显微镜研究中的淬火效应

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The experimental aspects of rapid-quench scanning tunneling microscopy are discussed. In particular, the effects of sample quenching are investigated in atomic-scale studies of the molecular beam epitaxial growth of GaAs. Implications for the study of the heteroepitaxial system InAs-GaAs are discussed.

机译：讨论了快速淬火扫描隧道显微镜的实验方面。尤其是，在GaAs分子束外延生长的原子尺度研究中研究了样品淬灭的影响。讨论了对异质外延系统InAs-GaAs的研究意义。

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《Symposium on Self-Organized Processes in Semiconductor Alloys held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.》|1999年|p.77-85|共9页
会议地点 Boston MA(US)
作者
G.R. Bell;
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正文语种 eng
中图分类无线电电子学、电信技术;
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Quenching effects in scanning tunneling microscopy studies of epitaxial growth

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