Backside Storage Non-Volatile Memories: Ultra-Thin Silicon Layer on a Complex Thin Film Structure

摘要

Backside storage memories present an alternative to the conventional front-floating gate geometries by storing charge in defects on the back of a thin depleted silicon channel. This paper focuses on the fabrication of these devices using a modified Smart-Cut™ substrate preparation process followed by standard CMOS processing. The substrate is a complex silicon-on-insulator (SOI) substrate where instead of the buried oxide alone a charge trapping multi-layer stack of oxide-nitride-oxide (ONO) is used as the buried insulator. We demonstrate here the operation of these device structures at ultra-short length scales and summarize the characteristics of their operation.