Method for fabricating a non-volatile memory including converting a silicon layer-which formed over a stacked structure having a charge storage layer-into an insulating layer

摘要

A method for fabricating a non-volatile memory is provided. The method includes a stacked structure and a consuming layer are formed in sequence over a substrate. A converting process is performed at a peripheral region of the consuming layer to form a first insulating layer. A conductive layer is formed over the stacked layer and the first insulating layer.