首页>
外国专利>
NICKEL SILICON BASED THIN FILM, NICKEL SILICON BASED MULTI-LAYERED FILM STRUCTURE, AND METHOD FOR MANUFACTURING NICKEL SILICON BASED THIN FILM
NICKEL SILICON BASED THIN FILM, NICKEL SILICON BASED MULTI-LAYERED FILM STRUCTURE, AND METHOD FOR MANUFACTURING NICKEL SILICON BASED THIN FILM
展开▼
机译:基于镍硅的薄膜,基于镍硅的多层膜结构以及制造基于镍硅的薄膜的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To provide a new nickel silicon thin film whose physical characteristics never deteriorate even when used at a high temperature and a manufacturing method therefor.;SOLUTION: On a silicon substrate 1, a silicon and carbon containing base film 2 and a nickel containing thin film 3 are formed in order by using a known filming method to form a multi-layered structure 5. Then this multi-layered structure 5 is heat-treated for mutually diffusing silicon elements in the silicon substrate 1, silicon elements and carbon elements in the base film 2, and nickel elements in the nickel containing thin film 3 and subject them to chemical reaction, thereby manufacturing the nickel silicon based thin film 6 containing carbon.;COPYRIGHT: (C)2004,JPO
展开▼