METHOD FOR FORMING NICKEL SILICON BASE THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a practical forming method of a nickel silicon base thin film wherein the nickel silicon base thin film can be formed in a comparatively short period of time by enlarging a heat treatment temperature range in the case of forming the nickel silicon base thin film, and a heat treatment temperature allowance is enlarged.;SOLUTION: A thin film 2 containing germanium and a nickle thin film 3 are formed sequentially on a silicon substrate 1 by using a wall-known film forming technique, and a multilayer film structure 5 is formed. Heat treatment is performed to the multilayer film structure 5. Silicon elements and germanium elements in the thin film 2 are made to react chemically with nickel elements in the nickel thin film 3, thereby obtaining the nickel silicon base thin film 6 having composition of Ni (Si_1-yGe_y) (0≤y≤1).;COPYRIGHT: (C)2004,JPO