Chemically Amplified Resist Approaches for E-beam Lithography Mask Fabrication

摘要

This paper describes stable, high sensitivity (5-10 μC/cm~2 at 50kV) e-beam resist systems utilizing chemical amplification suitable for mask fabrication for device generations below 100nm. In particular, two resist systems with improved performance for mask fabrication developed in a joint program by Etec, IBM and Shipley will be described: a Si- doped version of the IBM KRS-XE resist (now commercially available) developed at IBM Research, and a new MANA resist developed at Shipley. Commercialization issues for mask e-beam resists also will be discussed.