Department of Chemical Engineering, University of Florida, Gainesville, FL 32611;
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611;
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611;
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611;
rnDepartment of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611;
Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611;
Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611;
Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611;
rnDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL;
机译:氮化铝镓(GaN)/ GaN高电子迁移率晶体管传感器,用于呼出气冷凝物中的葡萄糖检测
机译:使用集成有Peltier元件的AlGaN / GaN高电子迁移率晶体管进行呼气检测
机译:在AlGaN / GaN高电子迁移率晶体管的栅极区域使用ZnO纳米棒进行酶促葡萄糖检测
机译:AlGaN / GaN高电子迁移率晶体管集成到无线检测系统中,用于葡萄糖和呼气呼吸冷凝物中的pH值
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:氮化铝镓(GaN)/ GaN高电子迁移率晶体管传感器用于呼出气冷凝物中的葡萄糖检测
机译:氮化铝镓(GaN)/ GaN高电子迁移率晶体管传感器,用于呼出气冷凝物中的葡萄糖检测
机译:si,GaN和alGaN / GaN高电子迁移率晶体管(HEmT)晶片的非接触迁移率,载流子密度和薄层电阻测量。