Energy Gap and Photoluminescence of Skewed SiGe/Si Strained MQWs Grown by MBE

摘要

1 Introduction Researching on optical property of strained SiGe/Si MQWs is of important current interest.[1][2][3] It shows potential application for optoelectronic integrated circuits. This is mainly because first SiGe/Si MQWs has improved optical property than Si by energy-band engineering. Second the SiGe/Si MQWs fabrication process has accommodated with current VLSI production technology.In SiGe/Si MQWs material,random distributed Ge atoms can enhance carrier recombination probability and band-offset of strained SiGe/Si heter-material can localize holes and electrons. Binding energy of excitons becomes much bigger due to the quantum confmement. It makes light emitting of SiGe/Si through exciton recombination much stronger.