Strained 1.3 /spl mu/m MQW AlGaInAs lasers grown by digital alloy MBE

摘要

AlGaInAs strained MQW lasers, emitting at 1.3 /spl mu/m, have been prepared for the first time using a digital alloy approach. 2 /spl mu/m stripe geometry lasers have characteristics comparable to those of lasers prepared using bulk alloy layers. The infinite length threshold current densities are as low as 140 kA/cm/sup 2//quantum well and T/sub 0/ values (20-40/spl deg/C) range from 75-90 K for chip lengths of 375-2375 /spl mu/m.