Strained AlGaInAs Semiconducting Material for Improved Laser Performance

摘要

This program has been successful at demonstrating for the first time thatstrained AlGaInAs quantum well lasers grown by MBE can exhibit superior reliability to AlGaAs quantum well lasers. The benefits to device performance justify undertaking the development of a commercial process to bring this improved reliability to the market for DOD applications. There were 11 quantum well wafers characterized to help guide the selection of optimum growth conditions and to understand the growth of strained AlGaInAs by MBE for laser applications. A total of 4 laser wafers have been processed under this program. Three wafers produced working lasers and one exhibits pulsed lifetest performance beyond any measured in the history of this company. Lifetest data is still being collected for laser array CW operation. The laser array performance seen is superior to any array made by this company to date. The light output for a given operating current does not degrade at up to 108 pulses. In fact, output rises slightly because threshold falls under operation.