Measurement of fast and slow interface traps in n-type dry thermally oxidized 6H-SiC mos diodes by high-frequency and quasi-static C-V techniques

摘要

We performed high frequency and quasi-static C-V and pulsed transient capacitance versus time (C-t) measurements on n-type 6H-SiC MOS capacitors over the temperatures range from 22℃ to 300℃. The quasi-static C-V characteristics exhibited startling non-idealities due to non-equilibrium conditions that arise from the fact that the recombination/generation process in 6H-SiC is extraordinarily slow even at the peak measurement temperature employed in this work. The recovery of the high-frequency capacitance from deep depletion to inversion was used to characterize the minority carrier generation process as a function of temperature. Zerbst analysis conducted on the resulting C-t transients, which were longer than a thousand seconds at 573 K, showed a generation lifetime thermal activation energy of 0.49 eV.