ISV, Linkoeping University, SE-601 74 Norrkoping, Sweden;
Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping, Sweden;
机译:在4H-SiC衬底上生长的异质外延3C-SiC的结构研究
机译:在图案化的4H-SiC衬底上通过蒸气-液-固机理消除3C-SiC异质外延生长时的孪晶边界
机译:在4H-SiC(0001)衬底上CVD异质外延生长3C-SiC
机译:在4H-SIC基材上生长的杂肾3C-SiC的结构研究
机译:AlN,4H-SiC,3C-SiC和ZrB2衬底上磷化硼的外延。
机译:Si(111)衬底上异质外延生长3C-SiC的动力学表面粗糙化和晶圆弯曲控制
机译:减少在4°离轴衬底上生长的厚4H-SiC外延层中的结构缺陷
机译:siC衬底上生长的外延3C-siC,4H-siC和6H-siC薄膜缺陷的研究