GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant

机译：通过磷注入形成GeSn N-FinFET和NiGeSn接触

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-GeSn contact formation was done by rapid thermal annealing below 400 °C. Contact resistivity was characterized by circular transmission line model. The contact resistance decreases with the carrier concentration or Sn fraction in GeSn films with the lowest contact resistivity of 3.8×10

机译：-GeSn接触的形成是通过低于400°C的快速热退火完成的。接触电阻率用圆形传输线模型表征。在最低接触电阻率为3.8×10的GeSn薄膜中，接触电阻随着载流子浓度或Sn分数的增加而降低。

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来源
《Silicon Nanoelectronics Workshop》|2017年|97-98|共2页
会议地点 Kyoto(JP)
作者
Yen Chuang; Hsien-Chih Huang; Jiun-Yun Li;
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Graduate Institute of Electronics Engineering National Taiwan University Taipei Taiwan;

Graduate Institute of Electronics Engineering National Taiwan University;

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关键词
Conductivity; Logic gates; Implants; Films; Phosphorus; Annealing; FinFETs;

机译：电导率逻辑门植入物；电影；磷;退火;鳍式场效应管;
入库时间 2022-08-26 14:34:57

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1. Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts [J] . Christian Schulte-Braucks, Emily Hofmann, Stefan Glass, Journal of Applied Physics . 2017,第20期

机译：通过NiGeSn-GeSn接触中的杂质隔离进行肖特基势垒调谐
2. Contact-Resistance Reduction for Strained n-FinFETs With Silicon–Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and Segregation [J] . Koh S.-M., Kong E. Y.-J., Liu B., Electron Devices, IEEE Transactions on . 2011,第11期

机译：具有碲离子注入和隔离的硅碳源/漏和铂基硅化物触点可降低应变n-FinFET的接触电阻
3. Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact [J] . Chou Chuan-Pu, Chen Chin-Yu, Chen Kuen-Yi, Microelectronic Engineering . 2017,第juna期

机译：通过接触中的低温Ge预非晶化注入改善了20 nm以下N-FinFET的漏电流和器件均匀性
4. GeSn N-FinFETs and NiGeSn Contact Formation by Phosphorus Implant [C] . Yen Chuang, Hsien-Chih Huang, Jiun-Yun Li IEEE Silicon Nanoelectronics Workshop . 2017

机译：Gesn N-Finfets和Nigesn接触形成由磷植入物
5. Formation of low-resistivity germanosilicide contacts to phosphorus doped silicon-germanium alloy source/drain junctions for nanoscale CMOS. [D] . Mo, Hongxiang. 2004

机译：低电阻率的锗硅化物接触层形成了用于纳米级CMOS的磷掺杂的硅锗合金源/漏结。
6. Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance [O] . Hsun-Ming Chang, Adam Charnas, Yu-Ming Lin, -1

机译：超低接触电阻的黑色磷场效应晶体管中的掺锗金属欧姆接触
7. Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration [O] . Antoine Veau, Thibaut Desrues, Audrey Morisset, 2019

机译：通过等离子体浸没离子注入（PIII）以前原位磷掺杂多晶硅膜：控制和简化钝化触点集成
8. RBS Study of Effect of Arsenic and Phosphorus Interfacial Segregation Upon the Sintering of Contacts Between Implanted Polycrystalline Silicon and Aluminum:Silicon(1%) [R] . Herbots, N., Lobet, M., Van de Wiele, F. 1984

机译：RBs研究砷和磷界面偏析对注入多晶硅与铝之间接触烧结的影响：硅（1％）

GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant

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