GERMANIUM SEMICONDUCTING RADIATION DETECTOR WITH PHOSPHORUS IMPLANTED N.SUP. CONTACTS

摘要

Abstract of the DisclosureGermanium detectors usable for charged particle spectroscopy andcapable of enduring overvoltage without impairment are produced by firstimplanting phosphorus ions in a small dose of high energy and then implantingmore phosphorus ions of lower energy in a large dose. The low energy ionsreduce surface resistance without impairing the improved properties of with-standing overvoltage that are provided by the high energy implantation. TheP+ contact is provided by boron ion implantation in a conventional manner."Dead zones" on both sides have been found to have a very small thickness of0.3 µm.