文摘
英文文摘
hapter 1 General Introduction
§ 1.1 Research background
§ 1.1.1 Impurity segregation in Si MBE
§ 1.1.2 Growth and properties of self-assembled Ge quantum dots
§ 1.2 Outline of this thesis
References
Chapter 2 Experimental Techniques and Characterization Methods
§ 2.1 UHV Si MBE system
§ 2.2 Phosphorus doping source
§ 2.3 Chemical cleaning and in situ pre-treatment of Si substrates
§ 2.4 X-ray scattering measurements
§ 2.4.1 X-ray Crystal truncation rod (CTR) scattering
§ 2.4.2 Small angle x-ray reflectivity (SAXR)
§ 2.4.3 Experimental details
§ 2.5 Other characterization methods
§ 2.5.1 Reflection high-energy electron diffraction (RHEED)
§ 2.5.2 Atomic force microscopy (AFM)
§ 2.5.3 Raman scattering spectroscopy
§ 2.5.4 Photoluminescence (PL) measurements
References
Chapter 3 Investigation of Phosphorus Surface Segregation by X-ray Scattering Measurements
§ 3.1 Introduction
§ 3.2 Calibration of P doping concentrations
§ 3.3 Discussions on several factors influencing X-ray CTR curves
§ 3.4 Experimental
§ 3.5 Results and discussion
§ 3.5.1 X-ray CTR scattering
§ 3.5.2 Small angle X-ray reflectivity (SAXR)
§ 3.6 Summary
References
Chapter 4 Phosphorus-Mediated Growth of Ge Quantum Dots on Si(001)
§ 4.1 Introduction
§ 4.2 Experimental
§ 4.3 Results and discussion
§ 4.3.1 Influence of P coverage on Ge dot morphology
§ 4.3.2 Morphology comparison with Sb-/C-mediated Ge dots
§ 4.3.3 Discussion on growth mechanisms
§ 4.3.4 Ge composition in P-mediated Ge dots
§ 4.3.5 Further revealing on growth mechanism by in-situ annealing
§ 4.4 Summary
References
Chapter 5 Growth of Ge Quantum Dot Multilayer Structures
§ 5.1 Introduction
§ 5.2 Experimental
§ 5.3 Results and discussion
§ 5.3.1 Morphology of Ge QD multilayer
§ 5.3.2 Ge composition in multilayer QD samples
§ 5.3.3 Photoluminescence (PL) measurements
§ 5.4 Summary
References
Papers published during the Ph. D. studies
Acknowledgements
论文独创性声明及使用授权声明
复旦大学;
