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Yttrium contacts for germanium semiconductor radiation detectors

机译:锗半导体辐射探测器的钇触点

摘要

A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.
机译:由钇金属制成的锗半导体辐射探测器触点。钇金属的薄(〜1000)沉积层在p型和n型锗半导体辐射探测器上都形成了薄的空穴阻挡层和/或电子阻挡层接触。钇触点提供了足够高的空穴势垒,以防止低于〜120 K的可测量触点泄漏电流。钇触点可以方便地分割为多个电极间电阻大于10GΩ的电独立电极。用钇触点制造的锗半导体辐射探测器二极管可提供良好的伽马射线光谱数据。

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