Inter-electrode charge collection in high-purity germanium detectors with amorphous semiconductor contacts

摘要

High-purity germanium (HPGe) radiation detectors with segmented signal readout electrodes combine excellent energy resolution with fine spatial resolution, opening exciting possibilities in radiation imaging applications. Segmenting the electrodes provides the ability to determine the positions of radiation interactions in the detector, but it also brings potential challenges that can inhibit performance. A challenge unique to segmented electrode detectors is collection of charge carriers to the gap between adjacent electrodes rather than to the electrodes themselves, which gives a deficit in the summed energy. While amorphous semiconductor electrical contacts have enabled a simplified fabrication process capable of fine electrode segmentation, the amorphous semiconductor passivation layer between electrodes is prone to inter-electrode charge collection. This article presents a study of the impact of fabrication process parameters on the energy deficit due to inter-electrode charge collection for double-sided strip detectors. Eight double-sided strip HPGe detectors were fabricated with amorphous germanium (a-Ge) and amorphous silicon (a-Si) contacts formed by sputter deposition. Each detector was evaluated for inter-electrode charge collection performance, using as a metric the deficit in the summed signal of two adjacent electrodes. It is demonstrated that both a-Ge and a-Si contacts can be produced with nearly non-existent inter-electrode charge collection when the appropriate combination of sputter gas hydrogen content and gas pressure are selected.