High performance Ge pMOSFETs with simultaneous mobility-412 cm

机译：具有412 cm迁移率的高性能Ge pMOSFET

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摘要

+1 V and an ultralow EOT of 0.53 nm in Ge pMOSFETs are simultaneously achieved by high-k/OD-HKVGeO

机译：高k / OD-HKVGeO可同时实现+1 V和0.53 nm的Gep MOSFET超低EOT

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《Silicon Nanoelectronics Workshop》|2017年|11-12|共2页
会议地点 Kyoto(JP)
作者
Shih-Han Yi; Jiayi Huang; Chia-Wei Hsu; Tzung-Yu Wu; Dun-Bao Ruan; Kuei-Shu Chang-Liao;
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Department of Engineering and System Science National Tsing Hua University Hsinchu Taiwan;

Department of Engineering and System Science National Tsing Hua Univ;

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MOSFET; Logic gates; Hafnium; Capacitance-voltage characteristics; Benchmark testing; Phonons; Scattering;

机译：MOSFET;逻辑门铪;电容电压特性；基准测试；声子散射;
入库时间 2022-08-26 14:34:52

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1. High performance Si/SiGe pMOSFETs fabricated in a standard CMOS process technology [J] . N. Collaert, P. Verheyen, K. De Meyer, Solid-State Electronics . 2003,第7期

机译：采用标准CMOS工艺技术制造的高性能Si / SiGe pMOSFET
2. Simultaneous optimization of short-channel effects and junction capacitance in pMOSFET using large-angle-tilt-implantation of nitrogen (LATIN) [J] . Kilho Lee, Murthy C., Rengarajan R., IEEE Electron Device Letters . 2002,第9期

机译：使用大角度倾斜氮注入（LATIN）同时优化pMOSFET中的短沟道效应和结电容
3. High-$kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances [J] . Le Royer C., Vincent B., Clavelier L., IEEE Electron Device Letters . 2008,第6期

机译：Ge富集技术在GeOI上实现了高kappa $和金属门pMOSFET：ON和OFF性能分析
4. High Performance Ge pMOSFETs with Simultaneous Mobility～412 cm~2/V-s, EOT ～0.5 nm, I_(ON)/I_(OFF)～10~5, Gate Leakage～10~(-4) A/cm~2 by Modulating Interfacial Layer using Oxygen Deficient HfO_x [C] . Shih-Han Yi, Jiayi Huang, Chia-Wei Hsu, IEEE Silicon Nanoelectronics Workshop . 2017

机译：高性能GE PMOSFET同时移动〜412 cm〜2 / vs，EOT〜0.5 nm，I_（上）/ I_（OFF）〜10〜5，栅极泄漏〜10〜（-4）A / cm〜2通过调制使用氧气缺陷HFO_x的界面层
5. CMOL/CMOS hardware architectures and performance/price for Bayesian memory - The building block of intelligent systems. [D] . Zaveri, Mazad Shaheriar. 2009

机译：贝叶斯存储器的CMOL / CMOS硬件体系结构和性能/价格-智能系统的组成部分。
6. A Comparative Study on the Thermal Energy Storage Performance of Bio-Based and Paraffin-Based PCMs Using DSC Procedures [O] . Mona Nazari Sam, Antonio Caggiano, Christoph Mankel, 2020

机译：基于DSC程序的生物基和石蜡基PCM的热能存储性能的比较研究
7. Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects [O] . Raseong Kim, Uygar E. Avci, Ian A. Young 2020

机译：考虑量子运输和载波散射效应的CMOS性能指标的全面的N和PMOSFET信道材料基准和分析

High performance Ge pMOSFETs with simultaneous mobility-412 cm

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